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| 2SC4130 Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4130 500 400 10 7(Pulse14) 2 30(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose (Ta=25C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=-0.5A VCB=10V, f=1MHz External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 2SC4130 100max 100max 400min 10 to 30 0.5max 1.3max 15typ 50typ Unit A V V V MHz pF 13.0min 16.90.3 8.40.2 A 1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 67 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.3 IB2 (A) -0.6 ton (s) 1max tstg (s) 2.2max tf (s) 0.5max 2.54 3.9 BCE IC - VCE Characteristics (Typical) 7 VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) (IC/I B= 5) Collector-Emitter Saturation Voltage V CE(s a t)( V ) Base-Emitter Saturation Voltage V B E (sa t)( V ) IC - VBE Temperature Characteristics (Typical) 7 (VCE=4V) IB =1 6 40 0m 10 00 m A A 60 0m A 400mA 2 Collector Current I C (A) 6 Collector Current I C (A) 4 4 mp) e Te (Cas -55C ) mp se Te 5C 200 mA em 50mA p) C V C E( sat) 0 0.02 0.05 0.1 0.5 (C 125C as e T -5 5 C 0 0 1 2 3 4 1 57 0 0 0.2 0.4 0.6 25 25 12 C (C 2 2 (Ca 0.8 ase 100m A -55C (Case Temp) p) 25C (Case Tem e Temp) 125C (Cas Tem 1 p) V B E( sat) 0.2 0.80.2 a b o3.30.2 Weight : Approx 2.0g a. Type No. b. Lot No. 1.0 1.2 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 50 D C Cur r ent Gai n h F E j- a( C/W) hFE - IC Characteristics (Typical) ton*tstg*t f ( s) 125C 25C -55C 5 t on *t stg * t f - I C Characteristics (Typical) j-a - t Characteristics 4 VCC 200V IC:I B 1: -I B2= 10:1:2 1 0.5 t on tf 0.1 0.2 0.5 1 t s tg 10 Transient Thermal Resistance Switching Ti me 1 5 0.5 0.3 2 0.02 0.05 0.1 0.5 1 5 7 5 7 1 10 Time t(ms) 100 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 20 10 5 Collect or Curr ent I C( A) DC 10 1m s 10 0 Reverse Bias Safe Operating Area 20 10 5 Collector Curren t I C (A) M aximum Power Dissipa ti on P C( W) 30 P c - T a Derating s m s W ith 20 In fin 1 0.5 1 0.5 ite he at si nk 0.1 0.05 Without Heatsink Natural Cooling 0.1 0.05 Without Heatsink Natural Cooling L=3mH IB2=-0.5A Duty:less than 1% 10 Without Heatsink 2 0.01 2 5 10 50 100 500 0.01 2 5 10 50 100 500 Collector-Emitter Voltage V C E( V) 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 88 |
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